Process and Sensitivity Optimisation of the Multi-Trigger Resist

Irresistible Materials (IM) is developing novel resist systems based on the multi-trigger concept, which incorporates a dose dependent quenching-like behaviour. In this study, we present results that have been obtained using Multi Trigger Resists (MTR) by performing EUV exposures ASML NXE scanner at IMEC. The MTR negative tone high opacity crosslinking incorporating. Pitch 28nm dense patterns can be patterned of 59mJ/cm2, line width 12.5nm, and biased LWR 3.91nm. These formulations also used to pattern 20nm diameter pillars hexagonal 40nm pitch with 51mJ/cm2, CDU 3.5nm; pitches 34nm 80mJ/cm2 achieve 17.5nm pillars. High photospeed approaches, p28 lines p34 hex sub-30 mJ/cm2 doses are introduced.